- Product Model W9425G6KH-5
- Brand Winbond Electronics Corporation
- RoHS Yes
- Description IC DRAM 256MBIT PAR 66TSOP II
- Categories Memory
-
PDF
- In Stock 1500
- 108 1.81
Technical Details
- Package / Case 66-TSSOP (0.400", 10.16mm Width)
- Mounting Type Surface Mount
- Memory Size 256Mbit
- Memory Type Volatile
- Operating Temperature 0°C ~ 70°C (TA)
- Voltage - Supply 2.3V ~ 2.7V
- Technology SDRAM - DDR
- Clock Frequency 200 MHz
- Memory Format DRAM
- Supplier Device Package 66-TSOP II
- Write Cycle Time - Word, Page 15ns
- Memory Interface Parallel
- Access Time 55 ns
- Memory Organization 16M x 16
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0002
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
IC FLASH 256MBIT SPI/QUAD 8WSON
In Stock: 1500
- 480: 2.58
IC FLASH 256MBIT SPI/QUAD 16SOIC
In Stock: 1500
- 176: 2.59
IC FLASH 1GBIT PARALLEL 48TSOP
In Stock: 1500
- 96: 2.78
IC DRAM 1GBIT SSTL 18 84TFBGA
In Stock: 1750
- 1: 3.16
- 10: 2.87
- 25: 2.81
- 40: 2.79
- 209: 2.5
- 418: 2.49
- 627: 2.4
- 1045: 2.28
IC DRAM 128MBIT PAR 54TSOP II
In Stock: 1500
- 1: 1.89
- 10: 1.72
- 25: 1.68
- 40: 1.67
- 108: 1.49
- 324: 1.49
- 540: 1.46
- 972: 1.4
- 4968: 1.31
IC DRAM 256MBIT PAR 54TSOP II
In Stock: 12194
- 1: 2.29
- 10: 2.06
- 25: 2.03
- 40: 2.02
- 108: 1.81
- 324: 1.75
- 540: 1.74
- 972: 1.62
- 4968: 1.47
IC DRAM 256MBIT PAR 54TSOP II
In Stock: 1500
- 1: 2.83
- 10: 2.55
- 25: 2.51
- 40: 2.5
- 108: 2.23
- 324: 2.16
- 540: 2.15
- 972: 2
- 4968: 1.81
